Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB33N60EF-GE3

SIHB33N60EF-GE3

SIHB33N60EF-GE3

Part NumberSIHB33N60EF-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 33A TO-263

DatasheetSIHB33N60EF

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB33N60EF-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB33N60EF-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB33N60EF-GE3.
We are offering SIHB33N60EF-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB33N60EF-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB33N60EF
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	98mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3454pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB33N60EF-GE3 - Related Products

	SISH402DN-T1-GE3	Vishay Siliconix, N-Channel 30V 19A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	NTD4858N-35G	ON Semiconductor, N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-PAK,	View
	IXTA6N100D2	IXYS, N-Channel 1000V 6A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA),	View
	FDC2612	ON Semiconductor, N-Channel 200V 1.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	STP55NF06	STMicroelectronics, N-Channel 60V 50A (Tc) 110W (Tc) Through Hole TO-220AB, STripFET™ II	View
	SI4156DY-T1-GE3	Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	PSMN4R3-80PS,127	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Through Hole TO-220AB,	View
	IRF510STRLPBF	Vishay Siliconix, N-Channel 100V 5.6A (Tc) 43W (Tc) Surface Mount D2PAK,	View
	BUK9Y6R0-60E,115	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IRL3103PBF	Infineon Technologies, N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®	View
	IXTK60N50L2	IXYS, N-Channel 500V 60A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™	View
	TK14A65W,S5X	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 40W (Tc) Through Hole TO-220SIS, DTMOSIV	View

SIHB33N60EF-GE3 - Tags

SIHB33N60EF-GE3 SIHB33N60EF-GE3 PDF SIHB33N60EF-GE3 datasheet SIHB33N60EF-GE3 specification SIHB33N60EF-GE3 image SIHB33N60EF-GE3 India Renesas Electronics India SIHB33N60EF-GE3 buy SIHB33N60EF-GE3 SIHB33N60EF-GE3 price SIHB33N60EF-GE3 distributor SIHB33N60EF-GE3 supplier SIHB33N60EF-GE3 wholesales