Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB22N60E-GE3

SIHB22N60E-GE3

SIHB22N60E-GE3

Part NumberSIHB22N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 21A D2PAK

DatasheetSiHB22N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB22N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB22N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB22N60E-GE3.
We are offering SIHB22N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB22N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB22N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB22N60E-GE3 - Related Products

	TPH8R903NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 1.6W (Ta), 24W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	SSM3K344R,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	SIR692DP-T1-RE3	Vishay Siliconix, N-Channel 250V 24.2A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	DMTH6009LK3Q-13	Diodes Incorporated, N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252,	View
	RD3T075CNTL1	Rohm Semiconductor, N-Channel 200V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,	View
	STB6N65M2	STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™	View
	RCJ220N25TL	Rohm Semiconductor, N-Channel 250V 22A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),	View
	IPZ40N04S5L2R8ATMA1	Infineon Technologies, N-Channel 40V 40A (Tc) 71W (Tc) Surface Mount PG-TSDSON-8, Automotive, AEC-Q101, OptiMOS™	View
	SIHH27N60EF-T1-GE3	Vishay Siliconix, N-Channel 600V 29A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	FDP120N10	ON Semiconductor, N-Channel 100V 74A (Tc) 170W (Tc) Through Hole TO-220-3, PowerTrench®	View
	BSP130,115	Nexperia USA Inc., N-Channel 300V 350mA (Ta) 1.5W (Ta) Surface Mount SC-73,	View
	IRFS11N50APBF	Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,	View

SIHB22N60E-GE3 - Tags

SIHB22N60E-GE3 SIHB22N60E-GE3 PDF SIHB22N60E-GE3 datasheet SIHB22N60E-GE3 specification SIHB22N60E-GE3 image SIHB22N60E-GE3 India Renesas Electronics India SIHB22N60E-GE3 buy SIHB22N60E-GE3 SIHB22N60E-GE3 price SIHB22N60E-GE3 distributor SIHB22N60E-GE3 supplier SIHB22N60E-GE3 wholesales