Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N60E-GE3

SIHB12N60E-GE3

SIHB12N60E-GE3

Part NumberSIHB12N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 12A TO263

DatasheetSIHB12N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB12N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N60E-GE3.
We are offering SIHB12N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB12N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	937pF @ 100V
FET Feature	-
Power Dissipation (Max)	147W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N60E-GE3 - Related Products

	SIR818DP-T1-GE3	Vishay Siliconix, N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STD12N65M2	STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	IRF540SPBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263),	View
	IRFR220TRRPBF	Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	NVMTS0D7N04CTXG	ON Semiconductor, N-Channel 40V 51A (Ta), 430A (Tc) 3.9W (Ta), 273W (Tc) Surface Mount, Wettable Flank 8-DFNW (8.3x8.4), Automotive, AEC-Q101	View
	SQM40014EM_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, Automotive, AEC-Q101, TrenchFET®	View
	BSC020N03LSGATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SI4430BDY-T1-E3	Vishay Siliconix, N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SIHB30N60AEL-GE3	Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak), EL	View
	RS1E300GNTB	Rohm Semiconductor, N-Channel 30V 30A (Ta) 3W (Ta), 33W (Tc) Surface Mount 8-HSOP,	View
	STB46N30M5	STMicroelectronics, N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ V	View
	2N7002E-7-F	Diodes Incorporated, N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3,	View

SIHB12N60E-GE3 - Tags

SIHB12N60E-GE3 SIHB12N60E-GE3 PDF SIHB12N60E-GE3 datasheet SIHB12N60E-GE3 specification SIHB12N60E-GE3 image SIHB12N60E-GE3 India Renesas Electronics India SIHB12N60E-GE3 buy SIHB12N60E-GE3 SIHB12N60E-GE3 price SIHB12N60E-GE3 distributor SIHB12N60E-GE3 supplier SIHB12N60E-GE3 wholesales