Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	PSMN019-100YLX	Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	AOD66920	Alpha & Omega Semiconductor Inc., N-Channel 100V 19.5A (Ta), 70A (Tc) 6.2W (Ta), 89W (Tc) Surface Mount TO-252 (DPAK), AlphaSGT™	View
	BSR802NL6327HTSA1	Infineon Technologies, N-Channel 20V 3.7A (Ta) 500mW (Ta) Surface Mount PG-SC-59, OptiMOS™	View
	IRF830BPBF	Vishay Siliconix, N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB,	View
	TSM090N03CP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDS3692	ON Semiconductor, N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	RU1J002YNTCL	Rohm Semiconductor, N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View
	NTMFS5H610NLT1G	ON Semiconductor, N-Channel 60V 12A (Ta) 44A (Tc) 3W (Ta), 43W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), #3	View
	NTA4153NT1G	ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	IXFP72N30X3M	IXYS, N-Channel 300V 72A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™	View
	FDMC86570LET60	ON Semiconductor, N-Channel 60V 18A (Ta), 87A (Tc) 2.8W (Ta), 65W (Tc) Surface Mount Power33, PowerTrench®	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales