Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPW60R125P6XKSA1

IPW60R125P6XKSA1

IPW60R125P6XKSA1

Part NumberIPW60R125P6XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V TO247-3

DatasheetIPW60R125P6, IPP60R125P6, IPA60R125P6

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3

To learn about the specification of IPW60R125P6XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPW60R125P6XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPW60R125P6XKSA1.
We are offering IPW60R125P6XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPW60R125P6XKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPW60R125P6, IPP60R125P6, IPA60R125P6
Standard Package	240
Manufacturer	Infineon Technologies
Series	CoolMOS™ P6
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2660pF @ 100V
FET Feature	-
Power Dissipation (Max)	219W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

IPW60R125P6XKSA1 - Related Products

	IRFZ24PBF	Vishay Siliconix, N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB,	View
	FDPF33N25T	ON Semiconductor, N-Channel 250V 33A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™	View
	FDD86250	ON Semiconductor, N-Channel 150V 8A (Ta), 50A (Tc) 3.1W (Ta), 132W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	BUK7635-55A,118	Nexperia USA Inc., N-Channel 55V 35A (Tc) 85W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SISH410DN-T1-GE3	Vishay Siliconix, N-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	TN5325N8-G	Microchip Technology, N-Channel 250V 316mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	TN2640K4-G	Microchip Technology, N-Channel 400V 500mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak),	View
	STP34NM60ND	STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II	View
	SI2312BDS-T1-E3	Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	MCH3474-TL-W	ON Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,	View
	IRFR320TRPBF	Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI1416EDH-T1-GE3	Vishay Siliconix, N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View

IPW60R125P6XKSA1 - Tags

IPW60R125P6XKSA1 IPW60R125P6XKSA1 PDF IPW60R125P6XKSA1 datasheet IPW60R125P6XKSA1 specification IPW60R125P6XKSA1 image IPW60R125P6XKSA1 India Renesas Electronics India IPW60R125P6XKSA1 buy IPW60R125P6XKSA1 IPW60R125P6XKSA1 price IPW60R125P6XKSA1 distributor IPW60R125P6XKSA1 supplier IPW60R125P6XKSA1 wholesales