Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA26DP-T1-RE3

SIRA26DP-T1-RE3

SIRA26DP-T1-RE3

Part NumberSIRA26DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAKSO-8

DatasheetSIRA26DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 43.1W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA26DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA26DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA26DP-T1-RE3.
We are offering SIRA26DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA26DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA26DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2247pF @ 10V
FET Feature	-
Power Dissipation (Max)	43.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA26DP-T1-RE3 - Related Products

	SIHG24N65EF-GE3	Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC,	View
	SQ4850EY-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	SIHB22N60ET1-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),	View
	PMV90ENER	Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB,	View
	RCX220N25	Rohm Semiconductor, N-Channel 250V 22A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	STD45NF75T4	STMicroelectronics, N-Channel 75V 40A (Tc) 125W (Tc) Surface Mount DPAK, STripFET™ II	View
	IRFL4105TRPBF	Infineon Technologies, N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	IXFP5N100PM	IXYS, N-Channel 1000V 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™, PolarP2™	View
	IRFB7530PBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	2N7002BKMB,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,	View
	STD35NF06T4	STMicroelectronics, N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK, STripFET™ II	View
	FQP4N80	ON Semiconductor, N-Channel 800V 3.9A (Tc) 130W (Tc) Through Hole TO-220-3, QFET®	View

SIRA26DP-T1-RE3 - Tags

SIRA26DP-T1-RE3 SIRA26DP-T1-RE3 PDF SIRA26DP-T1-RE3 datasheet SIRA26DP-T1-RE3 specification SIRA26DP-T1-RE3 image SIRA26DP-T1-RE3 India Renesas Electronics India SIRA26DP-T1-RE3 buy SIRA26DP-T1-RE3 SIRA26DP-T1-RE3 price SIRA26DP-T1-RE3 distributor SIRA26DP-T1-RE3 supplier SIRA26DP-T1-RE3 wholesales