SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Part Number SIDR392DP-T1-GE3 Description MOSFET N-CHAN 30V Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
To learn about the specification of SIDR392DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR392DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR392DP-T1-GE3.
We are offering SIDR392DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIDR392DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR390DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 9530pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8
SIDR392DP-T1-GE3 - Related ProductsMore >>
IPP028N08N3GXKSA1 Infineon Technologies, N-Channel 80V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
STF14NM50N STMicroelectronics, N-Channel 500V 12A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II
View
DMTH6009LK3-13 Diodes Incorporated, N-Channel 60V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252,
View
IRLL024NTRPBF Infineon Technologies, N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
SIHA14N60E-E3 Vishay Siliconix, N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-220 Full Pack,
View
FQP3N50C-F080 ON Semiconductor, N-Channel 500V 1.8A (Tc) 62W (Tc) Through Hole TO-220-3,
View
FDP150N10A-F102 ON Semiconductor, N-Channel 100V 50A (Tc) 91W (Tc) Through Hole TO-220-3, PowerTrench®
View
SI4848ADY-T1-GE3 Vishay Siliconix, N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC, TrenchFET®
View
IPB60R360P7ATMA1 Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
View
NTTFS5826NLTAG ON Semiconductor, N-Channel 60V 8A (Ta) 3.1W (Ta), 19W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
2SK2731T146 Rohm Semiconductor, N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SMT3,
View
FQI13N50CTU ON Semiconductor, N-Channel 500V 13A (Tc) 195W (Tc) Through Hole I2PAK (TO-262), QFET®
View
SIDR392DP-T1-GE3 - Tags
English
