SIB457EDK-T1-GE3
SIB457EDK-T1-GE3
Part Number SIB457EDK-T1-GE3 Description MOSFET P-CH 20V 9A PPAK SC75-6L Package / Case PowerPAK® SC-75-6LUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount
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SIB457EDK-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIB457EDK Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 2.4W (Ta), 13W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-75-6L
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