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SIB457EDK-T1-GE3

SIB457EDK-T1-GE3

Part NumberSIB457EDK-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 9A PPAK SC75-6L

DatasheetSIB457EDK

Package / CasePowerPAK® SC-75-6L

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount

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SIB457EDK-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIB457EDK
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 8V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L

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