Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIB406EDK-T1-GE3

SIB406EDK-T1-GE3

SIB406EDK-T1-GE3

Part NumberSIB406EDK-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 6A SC-75-6

DatasheetSIB406EDK

Package / CasePowerPAK® SC-75-6L

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6A (Tc) 1.95W (Ta), 10W (Tc) Surface Mount PowerPAK® SC-75-6L Single

To learn about the specification of SIB406EDK-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIB406EDK-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIB406EDK-T1-GE3.
We are offering SIB406EDK-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIB406EDK-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIB406EDK
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.95W (Ta), 10W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-75-6L Single
Package / Case	PowerPAK® SC-75-6L

SIB406EDK-T1-GE3 - Related Products

	BUK9Y53-100B,115	Nexperia USA Inc., N-Channel 100V 23A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	STN4NF06L	STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	TK8Q65W,S1Q	Toshiba Semiconductor and Storage, N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK, DTMOSIV	View
	PHB191NQ06LT,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	TPH14006NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 14A (Ta) 1.6W (Ta), 32W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	SQ2310ES-T1_GE3	Vishay Siliconix, N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236, TrenchFET®	View
	IXFX120N65X2	IXYS, N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	VN2460N8-G	Microchip Technology, N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	IXFN50N80Q2	IXYS, N-Channel 800V 50A (Tc) 1135W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	APT51F50J	Microsemi Corporation, N-Channel 500V 51A (Tc) 480W (Tc) Chassis Mount ISOTOP®,	View
	DMTH8012LPSQ-13	Diodes Incorporated, N-Channel 80V 10A (Ta), 72A (Tc) 2.6W (Ta), 136W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	IRF730APBF	Vishay Siliconix, N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View

SIB406EDK-T1-GE3 - Tags

SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 PDF SIB406EDK-T1-GE3 datasheet SIB406EDK-T1-GE3 specification SIB406EDK-T1-GE3 image SIB406EDK-T1-GE3 India Renesas Electronics India SIB406EDK-T1-GE3 buy SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 price SIB406EDK-T1-GE3 distributor SIB406EDK-T1-GE3 supplier SIB406EDK-T1-GE3 wholesales