Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA436DJ-T1-GE3

SIA436DJ-T1-GE3

SIA436DJ-T1-GE3

Part NumberSIA436DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 12A SC70-6L

DatasheetSiA436DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA436DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA436DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA436DJ-T1-GE3.
We are offering SIA436DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA436DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA436DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	9.4mOhm @ 15.7A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25.2nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1508pF @ 4V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA436DJ-T1-GE3 - Related Products

	TSM033NB04CR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 21A (Ta), 121A (Tc) 3.1W (Ta), 107W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRFR3710ZTRPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®	View
	STD5N80K5	STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	SSM3K72KFS,LF	Toshiba Semiconductor and Storage, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H	View
	STP11N65M5	STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ V	View
	FCD600N60Z	ON Semiconductor, N-Channel 600V 7.4A (Tc) 89W (Tc) Surface Mount D-Pak, SuperFET® II	View
	IRFBC20STRLPBF	Vishay Siliconix, N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,	View
	FCP4N60	ON Semiconductor, N-Channel 600V 3.9A (Tc) 50W (Tc) Through Hole TO-220-3, SuperFET™	View
	AOB25S65L	Alpha & Omega Semiconductor Inc., N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D²Pak), aMOS™	View
	FDBL0330N80	ON Semiconductor, N-Channel 80V 220A (Tc) 300W (Tc) Surface Mount 8-HPSOF, PowerTrench®	View
	IRFD220PBF	Vishay Siliconix, N-Channel 200V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	PSMN059-150Y,115	Nexperia USA Inc., N-Channel 150V 43A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8,	View

SIA436DJ-T1-GE3 - Tags

SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 PDF SIA436DJ-T1-GE3 datasheet SIA436DJ-T1-GE3 specification SIA436DJ-T1-GE3 image SIA436DJ-T1-GE3 India Renesas Electronics India SIA436DJ-T1-GE3 buy SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 price SIA436DJ-T1-GE3 distributor SIA436DJ-T1-GE3 supplier SIA436DJ-T1-GE3 wholesales