Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

Part NumberSIA429DJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC-70

DatasheetSiA429DJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA429DJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA429DJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA429DJT-T1-GE3.
We are offering SIA429DJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA429DJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA429DJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA429DJT-T1-GE3 - Related Products

	IRFR6215TRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SIRA01DP-T1-GE3	Vishay Siliconix, P-Channel 30V 26A (Ta), 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	RD3P130SPFRATL	Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	SIUD403ED-T1-GE3	Vishay Siliconix, P-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	BSP250,115	Nexperia USA Inc., P-Channel 30V 3A (Tc) 1.65W (Ta) Surface Mount SC-73,	View
	ZVP2120GTA	Diodes Incorporated, P-Channel 200V 200mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SI1427EDH-T1-GE3	Vishay Siliconix, P-Channel 20V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	FDS8433A	ON Semiconductor, P-Channel 20V 5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	TSM9435CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,	View
	TSM9409CS RLG	Taiwan Semiconductor Corporation, P-Channel 60V 3.5A (Ta) 3W (Ta) Surface Mount 8-SOP,	View
	RV1C001ZPT2L	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount VML0806,	View
	MCH6353-TL-W	ON Semiconductor, P-Channel 12V 6A (Ta) 1.4W (Ta) Surface Mount 6-MCPH,	View

SIA429DJT-T1-GE3 - Tags

SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 PDF SIA429DJT-T1-GE3 datasheet SIA429DJT-T1-GE3 specification SIA429DJT-T1-GE3 image SIA429DJT-T1-GE3 India Renesas Electronics India SIA429DJT-T1-GE3 buy SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 price SIA429DJT-T1-GE3 distributor SIA429DJT-T1-GE3 supplier SIA429DJT-T1-GE3 wholesales