Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

Part NumberSIA429DJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC-70

DatasheetSiA429DJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA429DJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA429DJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA429DJT-T1-GE3.
We are offering SIA429DJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA429DJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA429DJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA429DJT-T1-GE3 - Related Products

	NDS356AP	ON Semiconductor, P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	SI1499DH-T1-E3	Vishay Siliconix, P-Channel 8V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	SI7141DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMP3010LK3-13	Diodes Incorporated, P-Channel 30V 17A (Ta) 1.7W (Ta) Surface Mount TO-252-3,	View
	DMP32D4SFB-7B	Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	DMP2008UFG-13	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View
	SI4447ADY-T1-GE3	Vishay Siliconix, P-Channel 40V 7.2A (Tc) 4.2W (Tc) Surface Mount 8-SO, TrenchFET®	View
	DMP3008SFGQ-13	Diodes Incorporated, P-Channel 30V 8.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	CSD22206WT	Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5), NexFET™	View
	SI3443CDV-T1-GE3	Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SQD50P04-09L_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	BSS315PH6327XTSA1	Infineon Technologies, P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View

SIA429DJT-T1-GE3 - Tags

SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 PDF SIA429DJT-T1-GE3 datasheet SIA429DJT-T1-GE3 specification SIA429DJT-T1-GE3 image SIA429DJT-T1-GE3 India Renesas Electronics India SIA429DJT-T1-GE3 buy SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 price SIA429DJT-T1-GE3 distributor SIA429DJT-T1-GE3 supplier SIA429DJT-T1-GE3 wholesales