Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8823EDB-T2-E1

SI8823EDB-T2-E1

SI8823EDB-T2-E1

Part NumberSI8823EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.7A 4-MICROFOOT

DatasheetSI8823EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8823EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8823EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8823EDB-T2-E1.
We are offering SI8823EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8823EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8823EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 10V
FET Feature	-
Power Dissipation (Max)	900mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8823EDB-T2-E1 - Related Products

	ATP113-TL-H	ON Semiconductor, P-Channel 60V 35A (Ta) 50W (Tc) Surface Mount ATPAK,	View
	IRF9321TRPBF	Infineon Technologies, P-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SIA471DJ-T1-GE3	Vishay Siliconix, P-Channel 30V 12.9A (Ta), 30.3A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV	View
	SUD19P06-60-GE3	Vishay Siliconix, P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	TSM650P02CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	NDS0610	ON Semiconductor, P-Channel 60V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23,	View
	PMPB29XPEAX	Nexperia USA Inc., P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101, TrenchMOS™	View
	IRFR9310TRLPBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak,	View
	CSD22206W	Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5),	View
	SSM6J505NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 12A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	ZVP2106ASTZ	Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),	View
	SI2323DDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View

SI8823EDB-T2-E1 - Tags

SI8823EDB-T2-E1 SI8823EDB-T2-E1 PDF SI8823EDB-T2-E1 datasheet SI8823EDB-T2-E1 specification SI8823EDB-T2-E1 image SI8823EDB-T2-E1 India Renesas Electronics India SI8823EDB-T2-E1 buy SI8823EDB-T2-E1 SI8823EDB-T2-E1 price SI8823EDB-T2-E1 distributor SI8823EDB-T2-E1 supplier SI8823EDB-T2-E1 wholesales