Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8823EDB-T2-E1

SI8823EDB-T2-E1

SI8823EDB-T2-E1

Part NumberSI8823EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.7A 4-MICROFOOT

DatasheetSI8823EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8823EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8823EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8823EDB-T2-E1.
We are offering SI8823EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8823EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8823EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 10V
FET Feature	-
Power Dissipation (Max)	900mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8823EDB-T2-E1 - Related Products

	AOD407	Alpha & Omega Semiconductor Inc., P-Channel 60V 12A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	IRF7606TRPBF	Infineon Technologies, P-Channel 30V 3.6A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®	View
	SISS71DN-T1-GE3	Vishay Siliconix, P-Channel 100V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), ThunderFET®	View
	ZVP4525E6TA	Diodes Incorporated, P-Channel 250V 197mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View
	SI2309CDS-T1-E3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP2021UFDE-7	Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	BSP250,135	Nexperia USA Inc., P-Channel 30V 3A (Tc) 1.65W (Ta) Surface Mount SC-73,	View
	SSM3J351R,LF	Toshiba Semiconductor and Storage, P-Channel 60V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	NTGS5120PT1G	ON Semiconductor, P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP,	View
	FDD9509L-F085	ON Semiconductor, P-Channel 40V 90A (Tc) 150W (Tj) Surface Mount D-PAK (TO-252), PowerTrench®	View
	AO4449	Alpha & Omega Semiconductor Inc., P-Channel 30V 7A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	SQ3427EV-T1_GE3	Vishay Siliconix, P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View

SI8823EDB-T2-E1 - Tags

SI8823EDB-T2-E1 SI8823EDB-T2-E1 PDF SI8823EDB-T2-E1 datasheet SI8823EDB-T2-E1 specification SI8823EDB-T2-E1 image SI8823EDB-T2-E1 India Renesas Electronics India SI8823EDB-T2-E1 buy SI8823EDB-T2-E1 SI8823EDB-T2-E1 price SI8823EDB-T2-E1 distributor SI8823EDB-T2-E1 supplier SI8823EDB-T2-E1 wholesales