Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8823EDB-T2-E1

SI8823EDB-T2-E1

SI8823EDB-T2-E1

Part NumberSI8823EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.7A 4-MICROFOOT

DatasheetSI8823EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8823EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8823EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8823EDB-T2-E1.
We are offering SI8823EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8823EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8823EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 10V
FET Feature	-
Power Dissipation (Max)	900mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8823EDB-T2-E1 - Related Products

	SPD04P10PLGBTMA1	Infineon Technologies, P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	FDMA910PZ	ON Semiconductor, P-Channel 20V 9.4A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	SI8425DB-T1-E1	Vishay Siliconix, P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6), TrenchFET®	View
	PMXB350UPEZ	Nexperia USA Inc., P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3,	View
	SI7423DN-T1-E3	Vishay Siliconix, P-Channel 30V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	NDS0610	ON Semiconductor, P-Channel 60V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23,	View
	IXTT16P60P	IXYS, P-Channel 600V 16A (Tc) 460W (Tc) Surface Mount TO-268, PolarP™	View
	SI4401DDY-T1-GE3	Vishay Siliconix, P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SQM120P04-04L_GE3	Vishay Siliconix, P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), Automotive, AEC-Q101, TrenchFET®	View
	SI2307BDS-T1-GE3	Vishay Siliconix, P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount, TrenchFET®	View
	SIS443DN-T1-GE3	Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SIA477EDJ-T1-GE3	Vishay Siliconix, P-Channel 12V 12A (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View

SI8823EDB-T2-E1 - Tags

SI8823EDB-T2-E1 SI8823EDB-T2-E1 PDF SI8823EDB-T2-E1 datasheet SI8823EDB-T2-E1 specification SI8823EDB-T2-E1 image SI8823EDB-T2-E1 India Renesas Electronics India SI8823EDB-T2-E1 buy SI8823EDB-T2-E1 SI8823EDB-T2-E1 price SI8823EDB-T2-E1 distributor SI8823EDB-T2-E1 supplier SI8823EDB-T2-E1 wholesales