Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8816EDB-T2-E1

SI8816EDB-T2-E1

SI8816EDB-T2-E1

Part NumberSI8816EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V MICRO FOOT

DatasheetSI8816EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8816EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8816EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8816EDB-T2-E1.
We are offering SI8816EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8816EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8816EDB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8816EDB-T2-E1 - Related Products

	NVMFS4C03NT1G	ON Semiconductor, N-Channel 30V 31.4A (Ta), 143A (Tc) 3.71W (Ta), 77W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IRFS4610TRLPBF	Infineon Technologies, N-Channel 100V 73A (Tc) 190W (Tc) Surface Mount D2PAK, HEXFET®	View
	BSZ097N10NS5ATMA1	Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	DMN2004K-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	CSD16414Q5	Texas Instruments, N-Channel 25V 34A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	SIHFB20N50K-E3	Vishay Siliconix, N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-220AB,	View
	IRFP350LCPBF	Vishay Siliconix, N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-247-3,	View
	IRFH5004TRPBF	Infineon Technologies, N-Channel 40V 28A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®	View
	BUK7M22-80EX	Nexperia USA Inc., N-Channel 80V 37A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
	IXTT140N10P	IXYS, N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount TO-268, PolarHT™	View
	HUF75329D3ST	ON Semiconductor, N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA, UltraFET™	View
	STL150N3LLH6	STMicroelectronics, N-Channel 30V 150A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI	View

SI8816EDB-T2-E1 - Tags

SI8816EDB-T2-E1 SI8816EDB-T2-E1 PDF SI8816EDB-T2-E1 datasheet SI8816EDB-T2-E1 specification SI8816EDB-T2-E1 image SI8816EDB-T2-E1 India Renesas Electronics India SI8816EDB-T2-E1 buy SI8816EDB-T2-E1 SI8816EDB-T2-E1 price SI8816EDB-T2-E1 distributor SI8816EDB-T2-E1 supplier SI8816EDB-T2-E1 wholesales