Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8816EDB-T2-E1

SI8816EDB-T2-E1

SI8816EDB-T2-E1

Part NumberSI8816EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V MICRO FOOT

DatasheetSI8816EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8816EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8816EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8816EDB-T2-E1.
We are offering SI8816EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8816EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8816EDB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8816EDB-T2-E1 - Related Products

	BUK7635-100A,118	Nexperia USA Inc., N-Channel 100V 41A (Tc) 149W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SIB452DK-T1-GE3	Vishay Siliconix, N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	IRF7665S2TRPBF	Infineon Technologies, N-Channel 100V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB,	View
	STD25NF10T4	STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	TPN5900CNH,L1Q	Toshiba Semiconductor and Storage, N-Channel 150V 9A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H	View
	BUK9222-55A,118	Nexperia USA Inc., N-Channel 55V 48A (Tc) 103W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	STD4N90K5	STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	SIB422EDK-T1-GE3	Vishay Siliconix, N-Channel 20V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	IRFP240PBF	Vishay Siliconix, N-Channel 200V 20A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	IRFU3607PBF	Infineon Technologies, N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	FQP50N06L	ON Semiconductor, N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3, QFET®	View
	STD8NF25	STMicroelectronics, N-Channel 250V 8A (Tc) 72W (Tc) Surface Mount DPAK, STripFET™ II	View

SI8816EDB-T2-E1 - Tags

SI8816EDB-T2-E1 SI8816EDB-T2-E1 PDF SI8816EDB-T2-E1 datasheet SI8816EDB-T2-E1 specification SI8816EDB-T2-E1 image SI8816EDB-T2-E1 India Renesas Electronics India SI8816EDB-T2-E1 buy SI8816EDB-T2-E1 SI8816EDB-T2-E1 price SI8816EDB-T2-E1 distributor SI8816EDB-T2-E1 supplier SI8816EDB-T2-E1 wholesales