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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR3110ZPbF, IRLU3110ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ130N03LSGATMA1
Infineon Technologies, N-Channel 30V 10A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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PSMN1R3-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
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SUP10250E-GE3
Vishay Siliconix, N-Channel 250V 63A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
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CSD18535KTT
Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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IPB80N03S4L03ATMA1
Infineon Technologies, N-Channel 30V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
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PSMN2R6-30YLC,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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SISA14DN-T1-GE3
Vishay Siliconix, N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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FQPF2N80
ON Semiconductor, N-Channel 800V 1.5A (Tc) 35W (Tc) Through Hole TO-220F, QFET®
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2SK1828TE85LF
Toshiba Semiconductor and Storage, N-Channel 20V 50mA (Ta) 200mW (Ta) Surface Mount SC-59,
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FDD4N60NZ
ON Semiconductor, N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount DPAK, UniFET-II™
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IPA60R385CPXKSA1
Infineon Technologies, N-Channel 600V 9A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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R6015ENJTL
Rohm Semiconductor, N-Channel 600V 15A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
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