SI8497DB-T2-E1


SI8497DB-T2-E1

Part NumberSI8497DB-T2-E1

Manufacturer

Description

Datasheet

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI8497DB-T2-E1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2V, 4.5V
Rds On (Max) @ Id, Vgs53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1320pF @ 15V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-microfoot
Package / Case6-UFBGA

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SI8497DB-T2-E1 - Tags

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