SI8481DB-T1-E1
SI8481DB-T1-E1
Part Number SI8481DB-T1-E1
Description MOSFET P-CH 20V 9.7A 4-MICROFOOT
Package / Case 4-UFBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
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SI8481DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8481DB
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA
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