RCX081N20


RCX081N20

Part NumberRCX081N20

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RCX081N20 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package500
ManufacturerRohm Semiconductor
Series-
PackagingBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs770mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)2.23W (Ta), 40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack

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