SI7956DP-T1-GE3
SI7956DP-T1-GE3
Part Number SI7956DP-T1-GE3 Description MOSFET 2N-CH 150V 2.6A PPAK SO-8 Package / Case PowerPAK® SO-8 DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual
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SI7956DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI7956DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 2.6A Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Base Part Number SI7956
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