SI7900AEDN-T1-GE3


SI7900AEDN-T1-GE3

Part NumberSI7900AEDN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI7900AEDN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual
Base Part NumberSI7900

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SI7900AEDN-T1-GE3 - Tags

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