SI7900AEDN-T1-GE3
SI7900AEDN-T1-GE3
Part Number SI7900AEDN-T1-GE3 Description MOSFET 2N-CH 20V 6A PPAK 1212-8 Package / Case PowerPAK® 1212-8 DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
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SI7900AEDN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI7900AEDN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 26mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual Base Part Number SI7900
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