SI7900AEDN-T1-GE3
SI7900AEDN-T1-GE3
Part Number SI7900AEDN-T1-GE3
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Package / Case PowerPAK® 1212-8 Dual
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
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SI7900AEDN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI7900AEDN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Base Part Number SI7900
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