SI7772DP-T1-GE3


SI7772DP-T1-GE3

Part NumberSI7772DP-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI7772DP-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesSkyFET®, TrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1084pF @ 15V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 29.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

SI7772DP-T1-GE3 - Related Products

More >>
IRFH5406TRPBF Infineon Technologies, N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6), HEXFET® View
BUK961R6-40E,118 Nexperia USA Inc., N-Channel 40V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™ View
SI7114DN-T1-E3 Vishay Siliconix, N-Channel 30V 11.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET® View
CSD18511Q5A Texas Instruments, N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6), NexFET™ View
DMT10H010LK3-13 Diodes Incorporated, N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252, (D-Pak), View
PSMN015-60PS,127 Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Through Hole TO-220AB, View
IRFR4615TRLPBF Infineon Technologies, N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-Pak, HEXFET® View
STP34NM60ND STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II View
BSS123 ON Semiconductor, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, View
DN2535N3-G Microchip Technology, N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226), View
ZVNL120A Diodes Incorporated, N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole TO-92-3, View
STL36N55M5 STMicroelectronics, N-Channel 550V 22.5A (Tc) 2.8W (Ta), 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V View

SI7772DP-T1-GE3 - Tags

SI7772DP-T1-GE3 SI7772DP-T1-GE3 PDF SI7772DP-T1-GE3 datasheet SI7772DP-T1-GE3 specification SI7772DP-T1-GE3 image SI7772DP-T1-GE3 India Renesas Electronics India SI7772DP-T1-GE3 buy SI7772DP-T1-GE3 SI7772DP-T1-GE3 price SI7772DP-T1-GE3 distributor SI7772DP-T1-GE3 supplier SI7772DP-T1-GE3 wholesales