SI3499DV-T1-GE3
SI3499DV-T1-GE3
Part Number SI3499DV-T1-GE3 Description MOSFET P-CH 8V 5.3A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
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SI3499DV-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3499DV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V Vgs (Max) ±5V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
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