Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD70N10S312ATMA1

IPD70N10S312ATMA1

IPD70N10S312ATMA1

Part NumberIPD70N10S312ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 70A TO252-3

DatasheetIPD70N10S3-12

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD70N10S312ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD70N10S312ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD70N10S312ATMA1.
We are offering IPD70N10S312ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD70N10S312ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD70N10S3-12
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4355pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD70N10S312ATMA1 - Related Products

	IXFR64N60Q3	IXYS, N-Channel 600V 42A (Tc) 568W (Tc) Through Hole ISOPLUS247™, HiPerFET™	View
	IRFB4710PBF	Infineon Technologies, N-Channel 100V 75A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI1308EDL-T1-GE3	Vishay Siliconix, N-Channel 30V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SOT-323, TrenchFET®	View
	R6009ENJTL	Rohm Semiconductor, N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),	View
	ZXMN6A11GTA	Diodes Incorporated, N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	RUQ050N02TR	Rohm Semiconductor, N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	STD25NF20	STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™	View
	SI4800BDY-T1-E3	Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®	View
	STD5N60M2	STMicroelectronics, N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	DMN6040SVTQ-7	Diodes Incorporated, N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	SIA466EDJ-T1-GE3	Vishay Siliconix, N-Channel 20V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	SIR668ADP-T1-RE3	Vishay Siliconix, N-Channel 100V 93.6A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View

IPD70N10S312ATMA1 - Tags

IPD70N10S312ATMA1 IPD70N10S312ATMA1 PDF IPD70N10S312ATMA1 datasheet IPD70N10S312ATMA1 specification IPD70N10S312ATMA1 image IPD70N10S312ATMA1 India Renesas Electronics India IPD70N10S312ATMA1 buy IPD70N10S312ATMA1 IPD70N10S312ATMA1 price IPD70N10S312ATMA1 distributor IPD70N10S312ATMA1 supplier IPD70N10S312ATMA1 wholesales