SI7108DN-T1-GE3
SI7108DN-T1-GE3
Part Number SI7108DN-T1-GE3 Description MOSFET N-CH 20V 14A 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
To learn about the specification of SI7108DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7108DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7108DN-T1-GE3.
We are offering SI7108DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7108DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7108DN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 22A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±16V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SI7108DN-T1-GE3 - Related ProductsMore >>
IPD90R1K2C3ATMA1 Infineon Technologies, N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
R6035KNZC8 Rohm Semiconductor, N-Channel 600V 35A (Tc) 102W (Tc) Through Hole TO-3PF,
View
IRL40SC228 Infineon Technologies, N-Channel 40V 557A (Tc) 416W (Tc) Surface Mount D2PAK (7-Lead), StrongIRFET™
View
IXFN120N65X2 IXYS, N-Channel 650V 108A (Tc) 890W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
2N7002P,215 Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,
View
RS1E130GNTB Rohm Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP,
View
STP260N4F7 STMicroelectronics, N-Channel 40V 120A (Tc) 235W (Tc) Through Hole TO-220, STripFET™
View
IRF7601TRPBF Infineon Technologies, N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
View
IRLS3034TRLPBF Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
View
SQP60N06-15_GE3 Vishay Siliconix, N-Channel 60V 56A (Tc) 107W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
View
STP10NM60N STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Through Hole TO-220AB, MDmesh™ II
View
MCQ4822-TP Micro Commercial Co, N-Channel 30V 8.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP,
View
SI7108DN-T1-GE3 - Tags
English
