Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7108DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Vgs (Max)	±16V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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IPP60R099CPXKSA1	Infineon Technologies, N-Channel 650V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
SIHH26N60EF-T1-GE3	Vishay Siliconix, N-Channel 600V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
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SI7108DN-T1-GE3

Part NumberSI7108DN-T1-GE3