IPB020NE7N3GATMA1
IPB020NE7N3GATMA1
Part Number IPB020NE7N3GATMA1
Description MOSFET N-CH 75V 120A TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
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IPB020NE7N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB020NE7N3 G
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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