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SI6423DQ-T1-GE3

SI6423DQ-T1-GE3

Part NumberSI6423DQ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 8.2A 8-TSSOP

DatasheetSi6423DQ

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

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SI6423DQ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si6423DQ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.05W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)

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