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SI6423DQ-T1-GE3


SI6423DQ-T1-GE3

Part NumberSI6423DQ-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI6423DQ-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 5V
Vgs (Max)±8V
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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SI6423DQ-T1-GE3 - Tags

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