SI5908DC-T1-GE3
SI5908DC-T1-GE3
Part Number SI5908DC-T1-GE3
Description MOSFET 2N-CH 20V 4.4A 1206-8
Package / Case 8-SMD, Flat Lead
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
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SI5908DC-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI5908DC
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A
Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Part Number SI5908
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