Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI5424DC-T1-GE3

SI5424DC-T1-GE3

SI5424DC-T1-GE3

Part NumberSI5424DC-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 6A 1206-8

DatasheetSI5424DC

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 6A (Tc) 2.5W (Ta), 6.25W (Tc) Surface Mount 1206-8 ChipFET™

To learn about the specification of SI5424DC-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI5424DC-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI5424DC-T1-GE3.
We are offering SI5424DC-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI5424DC-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI5424DC
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	1206-8 ChipFET™
Package / Case	8-SMD, Flat Lead

SI5424DC-T1-GE3 - Related Products

	TK20A60U(Q,M)	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSII	View
	IPP028N08N3GXKSA1	Infineon Technologies, N-Channel 80V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	PMZ370UNEYL	Nexperia USA Inc., N-Channel 30V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View
	NTTFS6H850NTAG	ON Semiconductor, N-Channel 80V 11A (Ta), 68A (Tc) 3.2W (Ta), 107W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IRFZ10PBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,	View
	TK100A06N1,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	SIS892ADN-T1-GE3	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STB45N65M5	STMicroelectronics, N-Channel 650V 35A (Tc) 210W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	FQB8N60CTM	ON Semiconductor, N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	CSD16570Q5B	Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	STP36N55M5	STMicroelectronics, N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ V	View
	STL25N60M2-EP	STMicroelectronics, N-Channel 600V 16A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ M2-EP	View

SI5424DC-T1-GE3 - Tags

SI5424DC-T1-GE3 SI5424DC-T1-GE3 PDF SI5424DC-T1-GE3 datasheet SI5424DC-T1-GE3 specification SI5424DC-T1-GE3 image SI5424DC-T1-GE3 India Renesas Electronics India SI5424DC-T1-GE3 buy SI5424DC-T1-GE3 SI5424DC-T1-GE3 price SI5424DC-T1-GE3 distributor SI5424DC-T1-GE3 supplier SI5424DC-T1-GE3 wholesales