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SI4850BDY-T1-GE3

SI4850BDY-T1-GE3

Part NumberSI4850BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V SO-8

DatasheetSI4850BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SO

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SI4850BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4850BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	8.4A (Ta), 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 30V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 4.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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SI4850BDY-T1-GE3 - Tags

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