SI4850BDY-T1-GE3
SI4850BDY-T1-GE3
Part Number SI4850BDY-T1-GE3 Description MOSFET N-CH 60V SO-8 Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SO
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SI4850BDY-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4850BDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 4.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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