Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4840BDY-T1-GE3

SI4840BDY-T1-GE3

SI4840BDY-T1-GE3

Part NumberSI4840BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 19A 8SOIC

DatasheetSI4840BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4840BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4840BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4840BDY-T1-GE3.
We are offering SI4840BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4840BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4840BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4840BDY-T1-GE3 - Related Products

	R5007ANX	Rohm Semiconductor, N-Channel 500V 7A (Ta) 40W (Tc) Through Hole TO-220FM,	View
	IRLR014TRPBF	Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	TSM160N10LCR RLG	Taiwan Semiconductor Corporation, N-Channel 100V 46A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	FDB52N20TM	ON Semiconductor, N-Channel 200V 52A (Tc) 357W (Tc) Surface Mount D²PAK, UniFET™	View
	IRFHM8337TRPBF	Infineon Technologies, N-Channel 30V 12A (Ta) 2.8W (Ta), 25W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33, HEXFET®	View
	SIR158DP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SSM3K35AMFV,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount VESM, U-MOSIII	View
	IRF830ASTRLPBF	Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Surface Mount D2PAK,	View
	STB8N65M5	STMicroelectronics, N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	NTD4970N-35G	ON Semiconductor, N-Channel 30V 8.5A (Ta), 36A (Tc) 1.38W (Ta), 24.6W (Tc) Through Hole I-PAK,	View
	IRFZ44ZLPBF	Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Through Hole TO-262, HEXFET®	View
	BSB165N15NZ3GXUMA1	Infineon Technologies, N-Channel 150V 9A (Ta), 45A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™	View

SI4840BDY-T1-GE3 - Tags

SI4840BDY-T1-GE3 SI4840BDY-T1-GE3 PDF SI4840BDY-T1-GE3 datasheet SI4840BDY-T1-GE3 specification SI4840BDY-T1-GE3 image SI4840BDY-T1-GE3 India Renesas Electronics India SI4840BDY-T1-GE3 buy SI4840BDY-T1-GE3 SI4840BDY-T1-GE3 price SI4840BDY-T1-GE3 distributor SI4840BDY-T1-GE3 supplier SI4840BDY-T1-GE3 wholesales