SI4491EDY-T1-GE3
SI4491EDY-T1-GE3
Part Number SI4491EDY-T1-GE3 Description MOSFET P-CH 30V 17.3A 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SO
To learn about the specification of SI4491EDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4491EDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4491EDY-T1-GE3.
We are offering SI4491EDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4491EDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4491EDY-T1-GE3 Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 6.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4491EDY-T1-GE3 - Related ProductsMore >>
PMV30XPEAR Nexperia USA Inc., P-Channel 20V 4.5A (Ta) 490mW (Ta), 5.435W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
View
ZXMP4A57E6TA Diodes Incorporated, P-Channel 40V 2.9A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
BSP322PH6327XTSA1 Infineon Technologies, P-Channel 100V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
NTS4173PT1G ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),
View
TT8U1TR Rohm Semiconductor, P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST,
View
SI4143DY-T1-GE3 Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI2343DS-T1-E3 Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
VP0109N3-G Microchip Technology, P-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
CSD25501F3T Texas Instruments, P-Channel 20V 3.6A (Ta) 500mW (Ta) Surface Mount 3-LGA (0.73x0.64), FemtoFET™
View
DMS2085LSD-13 Diodes Incorporated, P-Channel 20V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO,
View
IRF7241TRPBF Infineon Technologies, P-Channel 40V 6.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
ZXMP6A18KTC Diodes Incorporated, P-Channel 60V 6.8A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
View
SI4491EDY-T1-GE3 - Tags
English
