FDFMA2P029Z
FDFMA2P029Z
Part Number FDFMA2P029Z Description MOSFET P-CH 20V 3.1A 2X2MLP Package / Case 6-VDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)
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FDFMA2P029Z - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDFMA2P029Z Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.4W (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MicroFET (2x2) Package / Case 6-VDFN Exposed Pad
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