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SI4447DY-T1-GE3


SI4447DY-T1-GE3

Part NumberSI4447DY-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI4447DY-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2500
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)15V, 10V
Rds On (Max) @ Id, Vgs72mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds805pF @ 20V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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