SI2333CDS-T1-E3
SI2333CDS-T1-E3
Part Number SI2333CDS-T1-E3 Description MOSFET P-CH 12V 7.1A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2333CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333CDS-T1-E3.
We are offering SI2333CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2333CDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si2333CDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2333CDS-T1-E3 - Related ProductsMore >>
SI3493BDV-T1-E3 Vishay Siliconix, P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SSM3J338R,LF Toshiba Semiconductor and Storage, P-Channel 12V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
RTL030P02TR Rohm Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TUMT6,
View
IRFU5305PBF Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
FDMA520PZ ON Semiconductor, P-Channel 20V 7.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
SI4401BDY-T1-E3 Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SQJ443EP-T1_GE3 Vishay Siliconix, P-Channel 40V 40A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
PMCM6501UPEZ Nexperia USA Inc., P-Channel 20V 556mW Surface Mount 4-WLCSP (2x2),
View
IRFR9214TRLPBF Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount D-Pak,
View
IRFR9010TRLPBF Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,
View
NTLUS3A18PZTCG ON Semiconductor, P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2),
View
IRFR9024NTRPBF Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®
View
SI2333CDS-T1-E3 - Tags
English
