SI2333CDS-T1-E3
SI2333CDS-T1-E3
Part Number SI2333CDS-T1-E3 Description MOSFET P-CH 12V 7.1A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2333CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333CDS-T1-E3.
We are offering SI2333CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2333CDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si2333CDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2333CDS-T1-E3 - Related ProductsMore >>
SI2371EDS-T1-GE3 Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®
View
SPP15P10PLHXKSA1 Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-TO220-3, SIPMOS®
View
IRFP9240PBF Vishay Siliconix, P-Channel 200V 12A (Tc) 150W (Tc) Through Hole TO-247-3,
View
SI7431DP-T1-E3 Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SQ2361ES-T1_GE3 Vishay Siliconix, P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®
View
FDMA291P ON Semiconductor, P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
IRF6217TRPBF Infineon Technologies, P-Channel 150V 700mA (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
LP0701N3-G Microchip Technology, P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92,
View
AON2403 Alpha & Omega Semiconductor Inc., P-Channel 12V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),
View
DMG1013T-7 Diodes Incorporated, P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount SOT-523,
View
BSP250,135 Nexperia USA Inc., P-Channel 30V 3A (Tc) 1.65W (Ta) Surface Mount SC-73,
View
SPD04P10PLGBTMA1 Infineon Technologies, P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
SI2333CDS-T1-E3 - Tags
English
