Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

Part NumberSIA477EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA477EDJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA477EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA477EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA477EDJT-T1-GE3.
We are offering SIA477EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA477EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA477EDJT
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	3050pF @ 6V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA477EDJT-T1-GE3 - Related Products

	IRLML9303TRPBF	Infineon Technologies, P-Channel 30V 2.3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SI7633DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFU9220PBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	DMP2123L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	SIA427DJ-T1-GE3	Vishay Siliconix, P-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	IXTH16P60P	IXYS, P-Channel 600V 16A (Tc) 460W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	PMPB15XP,115	Nexperia USA Inc., P-Channel 12V 8.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	RZL035P01TR	Rohm Semiconductor, P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	FDD306P	ON Semiconductor, P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252, PowerTrench®	View
	IRFR9014TRLPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	NVD2955T4G	ON Semiconductor, P-Channel 60V 12A (Ta) 55W (Ta) Surface Mount DPAK, Automotive, AEC-Q101	View

SIA477EDJT-T1-GE3 - Tags

SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 PDF SIA477EDJT-T1-GE3 datasheet SIA477EDJT-T1-GE3 specification SIA477EDJT-T1-GE3 image SIA477EDJT-T1-GE3 India Renesas Electronics India SIA477EDJT-T1-GE3 buy SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 price SIA477EDJT-T1-GE3 distributor SIA477EDJT-T1-GE3 supplier SIA477EDJT-T1-GE3 wholesales