SI4425BDY-T1-E3
SI4425BDY-T1-E3
Part Number SI4425BDY-T1-E3 Description MOSFET P-CH 30V 8.8A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
To learn about the specification of SI4425BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4425BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4425BDY-T1-E3.
We are offering SI4425BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4425BDY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4425BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4425BDY-T1-E3 - Related ProductsMore >>
TPN4R712MD,L1Q Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI
View
IRF9393TRPBF Infineon Technologies, P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IRF4905STRLPBF Infineon Technologies, P-Channel 55V 42A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
View
SSM6J511NU,LF Toshiba Semiconductor and Storage, P-Channel 12V 14A (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII
View
SSM3J117TU,LF Toshiba Semiconductor and Storage, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSII
View
DMG4413LSS-13 Diodes Incorporated, P-Channel 30V 10.5A (Ta) 1.7W (Ta) Surface Mount 8-SOP,
View
FDMS6673BZ ON Semiconductor, P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
View
FQP4P40 ON Semiconductor, P-Channel 400V 3.5A (Tc) 85W (Tc) Through Hole TO-220-3, QFET®
View
TP2635N3-G Microchip Technology, P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3,
View
IRFR9214TRLPBF Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount D-Pak,
View
SI2305CDS-T1-GE3 Vishay Siliconix, P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
RSF010P05TL Rohm Semiconductor, P-Channel 45V 1A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
SI4425BDY-T1-E3 - Tags
English
