Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

Part NumberSI4403CDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 13.4A 8SOIC

DatasheetSI4403CDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 13.4A (Tc) 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4403CDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4403CDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4403CDY-T1-GE3.
We are offering SI4403CDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4403CDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4403CDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	15.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2380pF @ 10V
FET Feature	-
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4403CDY-T1-GE3 - Related Products

	FDN306P	ON Semiconductor, P-Channel 12V 2.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	SQ1421EDH-T1_GE3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	NTD2955T4G	ON Semiconductor, P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK,	View
	IRLML6402TRPBF	Infineon Technologies, P-Channel 20V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	TPN4R712MD,L1Q	Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI	View
	BSS215PH6327XTSA1	Infineon Technologies, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	FQU8P10TU	ON Semiconductor, P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View
	RE1E002SPTCL	Rohm Semiconductor, P-Channel 30V 250mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
	SQS481ENW-T1_GE3	Vishay Siliconix, P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J143TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SQP90P06-07L_GE3	Vishay Siliconix, P-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	ZXM62P02E6TA	Diodes Incorporated, P-Channel 20V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View

SI4403CDY-T1-GE3 - Tags

SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 PDF SI4403CDY-T1-GE3 datasheet SI4403CDY-T1-GE3 specification SI4403CDY-T1-GE3 image SI4403CDY-T1-GE3 India Renesas Electronics India SI4403CDY-T1-GE3 buy SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 price SI4403CDY-T1-GE3 distributor SI4403CDY-T1-GE3 supplier SI4403CDY-T1-GE3 wholesales