Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

Part NumberSI4401FDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 40V SO-8

DatasheetSI4401FDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4401FDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4401FDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4401FDY-T1-GE3.
We are offering SI4401FDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4401FDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4401FDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4401FDY-T1-GE3 - Related Products

	SI2343DS-T1-E3	Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	AUIRFR5410TRL	Infineon Technologies, P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101, HEXFET®	View
	SUD50P06-15L-E3	Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	DMG3401LSN-7	Diodes Incorporated, P-Channel 30V 3A (Ta) 800mW (Ta) Surface Mount SC-59,	View
	DMP2066UFDE-7	Diodes Incorporated, P-Channel 20V 6.2A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	TP2435N8-G	Microchip Technology, P-Channel 350V 231mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	NTF5P03T3G	ON Semiconductor, P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223,	View
	PMFPB8032XP,115	Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),	View
	SI9407BDY-T1-GE3	Vishay Siliconix, P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FQP2P40-F080	ON Semiconductor, P-Channel 400V 2A (Tc) 63W (Tc) Through Hole TO-220-3, QFET®	View
	RRL035P03FRATR	Rohm Semiconductor, P-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6, Automotive, AEC-Q101	View
	CSD25304W1015T	Texas Instruments, P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View

SI4401FDY-T1-GE3 - Tags

SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 PDF SI4401FDY-T1-GE3 datasheet SI4401FDY-T1-GE3 specification SI4401FDY-T1-GE3 image SI4401FDY-T1-GE3 India Renesas Electronics India SI4401FDY-T1-GE3 buy SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 price SI4401FDY-T1-GE3 distributor SI4401FDY-T1-GE3 supplier SI4401FDY-T1-GE3 wholesales