IXTH8P50
IXTH8P50
Part Number IXTH8P50 Manufacturer IXYS Description MOSFET P-CH 500V 8A TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)
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IXTH8P50 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(H,T)8P50 Standard Package 30 Manufacturer IXYS Series - Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3
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SSM6J512NU,LF Toshiba Semiconductor and Storage, P-Channel 12V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII
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RRH100P03GZETB Rohm Semiconductor, P-Channel 30V 10A (Ta) 650mW (Ta) Surface Mount 8-SOP,
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VP0550N3-G Microchip Technology, P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-92-3,
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