Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4160DY-T1-GE3

SI4160DY-T1-GE3

SI4160DY-T1-GE3

Part NumberSI4160DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25.4A 8-SOIC

DatasheetSI4160DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4160DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4160DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4160DY-T1-GE3.
We are offering SI4160DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4160DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4160DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2071pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4160DY-T1-GE3 - Related Products

	NTD4860NT4G	ON Semiconductor, N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Surface Mount DPAK,	View
	SIHD12N50E-GE3	Vishay Siliconix, N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA),	View
	IXTP08N100D2	IXYS, N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,	View
	IPD35N10S3L26ATMA1	Infineon Technologies, N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	BSZ0909NSATMA1	Infineon Technologies, N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SQM90142E_GE3	Vishay Siliconix, N-Channel 200V 95A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	SIR870ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRLL3303TRPBF	Infineon Technologies, N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	TK7P60W5,RVQ	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV	View
	SK8603140L	Panasonic Electronic Components, N-Channel 30V 25A (Ta), 103A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount HSO8-F4-B,	View
	IRLML2803TRPBF	Infineon Technologies, N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	ZXMN3B14FTA	Diodes Incorporated, N-Channel 30V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3,	View

SI4160DY-T1-GE3 - Tags

SI4160DY-T1-GE3 SI4160DY-T1-GE3 PDF SI4160DY-T1-GE3 datasheet SI4160DY-T1-GE3 specification SI4160DY-T1-GE3 image SI4160DY-T1-GE3 India Renesas Electronics India SI4160DY-T1-GE3 buy SI4160DY-T1-GE3 SI4160DY-T1-GE3 price SI4160DY-T1-GE3 distributor SI4160DY-T1-GE3 supplier SI4160DY-T1-GE3 wholesales