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FDP020N06B-F102

FDP020N06B-F102

Part NumberFDP020N06B-F102

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 120A TO-220-3

DatasheetFDP020N06B_F102

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 120A (Tc) 333W (Tc) Through Hole TO-220-3

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FDP020N06B-F102 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDP020N06B_F102
Standard Package	800
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	268nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	20930pF @ 30V
FET Feature	-
Power Dissipation (Max)	333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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