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SI3585CDV-T1-GE3

SI3585CDV-T1-GE3

Part NumberSI3585CDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 3.9A 6TSOP

DatasheetSI3585CDV-T1-GE3

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP

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SI3585CDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI3585CDV-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A, 2.1A
Rds On (Max) @ Id, Vgs	58mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 10V
Power - Max	1.4W, 1.3W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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SI3585CDV-T1-GE3 - Tags

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