Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3493DDV-T1-GE3

SI3493DDV-T1-GE3

SI3493DDV-T1-GE3

Part NumberSI3493DDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHANNEL 20V 8A 6TSOP

DatasheetSI3493DDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3493DDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3493DDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3493DDV-T1-GE3.
We are offering SI3493DDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3493DDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3493DDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1825pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3493DDV-T1-GE3 - Related Products

	SSM3J35CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	SI7469DP-T1-GE3	Vishay Siliconix, P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SIA445EDJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	SI2333CDS-T1-GE3	Vishay Siliconix, P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	RSC002P03T316	Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount SST3,	View
	SI3499DV-T1-GE3	Vishay Siliconix, P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, TrenchFET®	View
	DMG2301L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount SOT-23,	View
	SIS427EDN-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RT1E040RPTR	Rohm Semiconductor, P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST,	View
	SSM3J46CTB(TPL3)	Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) Surface Mount CST3B, U-MOSVI	View
	FQD4P25TM-WS	ON Semiconductor, P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak, QFET®	View
	IRFR9310TRPBF	Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak,	View

SI3493DDV-T1-GE3 - Tags

SI3493DDV-T1-GE3 SI3493DDV-T1-GE3 PDF SI3493DDV-T1-GE3 datasheet SI3493DDV-T1-GE3 specification SI3493DDV-T1-GE3 image SI3493DDV-T1-GE3 India Renesas Electronics India SI3493DDV-T1-GE3 buy SI3493DDV-T1-GE3 SI3493DDV-T1-GE3 price SI3493DDV-T1-GE3 distributor SI3493DDV-T1-GE3 supplier SI3493DDV-T1-GE3 wholesales