Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2399DS-T1-GE3

SI2399DS-T1-GE3

SI2399DS-T1-GE3

Part NumberSI2399DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 6A SOT-23

DatasheetSI2399DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2399DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2399DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2399DS-T1-GE3.
We are offering SI2399DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2399DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2399DS-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	835pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2399DS-T1-GE3 - Related Products

	SI2323DS-T1-E3	Vishay Siliconix, P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SISH625DN-T1-GE3	Vishay Siliconix, P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	STD35P6LLF6	STMicroelectronics, P-Channel 60V 35A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6	View
	SIR167DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen III	View
	DMP2035UVT-7	Diodes Incorporated, P-Channel 20V 6A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	SI1013R-T1-GE3	Vishay Siliconix, P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	SQ3469EV-T1_GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	FDS8433A	ON Semiconductor, P-Channel 20V 5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	IPB180P04P4L02ATMA1	Infineon Technologies, P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	SI3437DV-T1-GE3	Vishay Siliconix, P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	AOD4185	Alpha & Omega Semiconductor Inc., P-Channel 40V 40A (Tc) 2.5W (Ta), 62.5W (Tc) Surface Mount TO-252, (D-Pak),	View
	SUM110P08-11L-E3	Vishay Siliconix, P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View

SI2399DS-T1-GE3 - Tags

SI2399DS-T1-GE3 SI2399DS-T1-GE3 PDF SI2399DS-T1-GE3 datasheet SI2399DS-T1-GE3 specification SI2399DS-T1-GE3 image SI2399DS-T1-GE3 India Renesas Electronics India SI2399DS-T1-GE3 buy SI2399DS-T1-GE3 SI2399DS-T1-GE3 price SI2399DS-T1-GE3 distributor SI2399DS-T1-GE3 supplier SI2399DS-T1-GE3 wholesales