Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2338DS-T1-GE3

SI2338DS-T1-GE3

SI2338DS-T1-GE3

Part NumberSI2338DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 6A SOT23

DatasheetSI2338DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2338DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2338DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2338DS-T1-GE3.
We are offering SI2338DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2338DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2338DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	424pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2338DS-T1-GE3 - Related Products

	SSM3K344R,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	STB75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™	View
	PSMN1R5-40PS,127	Nexperia USA Inc., N-Channel 40V 120A (Tc) 338W (Tc) Through Hole TO-220AB,	View
	NTTFS5C453NLTAG	ON Semiconductor, N-Channel 40V 23A (Ta), 107A (Tc) 3.3W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	R6011KNX	Rohm Semiconductor, N-Channel 600V 11A (Tc) 53W (Tc) Through Hole TO-220FM,	View
	SIJA54DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STY100NM60N	STMicroelectronics, N-Channel 600V 98A (Tc) 625W (Tc) Through Hole MAX247™, MDmesh™ II	View
	DMN2005UPS-13	Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8,	View
	SISA72DN-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	FDD86326	ON Semiconductor, N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	SI2304-TP	Micro Commercial Co, N-Channel 30V 2.5A (Ta) 250mW (Ta) Surface Mount SOT-23,	View
	IRF6614TRPBF	Infineon Technologies, N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®	View

SI2338DS-T1-GE3 - Tags

SI2338DS-T1-GE3 SI2338DS-T1-GE3 PDF SI2338DS-T1-GE3 datasheet SI2338DS-T1-GE3 specification SI2338DS-T1-GE3 image SI2338DS-T1-GE3 India Renesas Electronics India SI2338DS-T1-GE3 buy SI2338DS-T1-GE3 SI2338DS-T1-GE3 price SI2338DS-T1-GE3 distributor SI2338DS-T1-GE3 supplier SI2338DS-T1-GE3 wholesales