Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2338DS-T1-GE3

SI2338DS-T1-GE3

SI2338DS-T1-GE3

Part NumberSI2338DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 6A SOT23

DatasheetSI2338DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2338DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2338DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2338DS-T1-GE3.
We are offering SI2338DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2338DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2338DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	424pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2338DS-T1-GE3 - Related Products

	BUK9628-55A,118	Nexperia USA Inc., N-Channel 55V 42A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SSM3K72KCT,L3F	Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H	View
	AUIRFB8405	Infineon Technologies, N-Channel 40V 120A (Tc) 163W (Tc) Through Hole TO-220AB, HEXFET®	View
	STD3N62K3	STMicroelectronics, N-Channel 620V 2.7A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH3™	View
	NVBLS0D5N04M8TXG	ON Semiconductor, N-Channel 40V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF, Automotive, AEC-Q101	View
	ZVN4310GTA	Diodes Incorporated, N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223,	View
	NTMFS4937NT1G	ON Semiconductor, N-Channel 30V 10.2A (Ta), 70A (Tc) 920mW (Ta), 43W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IPA60R190C6XKSA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IRFP32N50KPBF	Vishay Siliconix, N-Channel 500V 32A (Tc) 460W (Tc) Through Hole TO-247-3,	View
	IRLR3410TRPBF	Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®	View
	2N7002 TR	Central Semiconductor Corp, N-Channel 60V 115mA (Tc) 350mW (Ta) Surface Mount SOT-23,	View
	STF10N60DM2	STMicroelectronics, N-Channel 600V 8A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ DM2	View

SI2338DS-T1-GE3 - Tags

SI2338DS-T1-GE3 SI2338DS-T1-GE3 PDF SI2338DS-T1-GE3 datasheet SI2338DS-T1-GE3 specification SI2338DS-T1-GE3 image SI2338DS-T1-GE3 India Renesas Electronics India SI2338DS-T1-GE3 buy SI2338DS-T1-GE3 SI2338DS-T1-GE3 price SI2338DS-T1-GE3 distributor SI2338DS-T1-GE3 supplier SI2338DS-T1-GE3 wholesales