Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

Part NumberSIA421DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12A SC70-6

DatasheetSIA421DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA421DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA421DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA421DJ-T1-GE3.
We are offering SIA421DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA421DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA421DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	35mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA421DJ-T1-GE3 - Related Products

	NVJS4151PT1G	ON Semiconductor, P-Channel 20V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363,	View
	CSD25304W1015	Texas Instruments, P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View
	DMP32D4SW-7	Diodes Incorporated, P-Channel 30V 250mA (Ta) 300mW (Ta) Surface Mount SOT-323,	View
	IXTH8P50	IXYS, P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH),	View
	SI7121DN-T1-GE3	Vishay Siliconix, P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FQPF47P06	ON Semiconductor, P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
	CSD25404Q3T	Texas Instruments, P-Channel 20V 104A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™	View
	SUD50P06-15L-E3	Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	NDS0610	ON Semiconductor, P-Channel 60V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23,	View
	VP2450N8-G	Microchip Technology, P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	SIB457EDK-T1-GE3	Vishay Siliconix, P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®	View
	FDME510PZT	ON Semiconductor, P-Channel 20V 6A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View

SIA421DJ-T1-GE3 - Tags

SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 PDF SIA421DJ-T1-GE3 datasheet SIA421DJ-T1-GE3 specification SIA421DJ-T1-GE3 image SIA421DJ-T1-GE3 India Renesas Electronics India SIA421DJ-T1-GE3 buy SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 price SIA421DJ-T1-GE3 distributor SIA421DJ-T1-GE3 supplier SIA421DJ-T1-GE3 wholesales