SIA421DJ-T1-GE3
SIA421DJ-T1-GE3
Part Number SIA421DJ-T1-GE3 Description MOSFET P-CH 30V 12A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA421DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA421DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA421DJ-T1-GE3.
We are offering SIA421DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA421DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA421DJ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIA421DJ-T1-GE3 - Related ProductsMore >>
ZVP2106ASTZ Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
RW1E025RPT2CR Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
NTLUS3A40PZTBG ON Semiconductor, P-Channel 20V 4A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2), µCool™
View
SI3469DV-T1-E3 Vishay Siliconix, P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®
View
SI4459ADY-T1-GE3 Vishay Siliconix, P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
CPH3348-TL-W ON Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
SI1021R-T1-GE3 Vishay Siliconix, P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®
View
NVTFS5124PLTWG ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
DMP32D4S-7 Diodes Incorporated, P-Channel 30V 300mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
SI4401BDY-T1-GE3 Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SUD19P06-60L-E3 Vishay Siliconix, P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
IRF7606TRPBF Infineon Technologies, P-Channel 30V 3.6A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
View
SIA421DJ-T1-GE3 - Tags
English
