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SI2329DS-T1-GE3


SI2329DS-T1-GE3

Part NumberSI2329DS-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI2329DS-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1485pF @ 4V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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SI2329DS-T1-GE3 - Tags

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