Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2325DS-T1-GE3

SI2325DS-T1-GE3

SI2325DS-T1-GE3

Part NumberSI2325DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 0.53A SOT-23

DatasheetSI2325DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2325DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2325DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2325DS-T1-GE3.
We are offering SI2325DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2325DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2325DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2325DS-T1-GE3 - Related Products

	SSM3J118TU(TE85L)	Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSII	View
	SUD50P08-25L-E3	Vishay Siliconix, P-Channel 80V 50A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	FDME905PT	ON Semiconductor, P-Channel 12V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	SI7617DN-T1-GE3	Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	MCMG66-TP	Micro Commercial Co, P-Channel 16V 5.8A (Ta) 1.7W (Ta) Surface Mount DFN2020-6G,	View
	IRFR9024TRLPBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI4483ADY-T1-GE3	Vishay Siliconix, P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI3443CDV-T1-E3	Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SSM3J35AMFV,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII	View
	DMP26M7UFG-7	Diodes Incorporated, P-Channel 20V 18A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,	View
	6HP04CH-TL-W	ON Semiconductor, P-Channel 60V 370mA (Ta) Surface Mount 3-CPH,	View
	SI7655ADN-T1-GE3	Vishay Siliconix, P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View

SI2325DS-T1-GE3 - Tags

SI2325DS-T1-GE3 SI2325DS-T1-GE3 PDF SI2325DS-T1-GE3 datasheet SI2325DS-T1-GE3 specification SI2325DS-T1-GE3 image SI2325DS-T1-GE3 India Renesas Electronics India SI2325DS-T1-GE3 buy SI2325DS-T1-GE3 SI2325DS-T1-GE3 price SI2325DS-T1-GE3 distributor SI2325DS-T1-GE3 supplier SI2325DS-T1-GE3 wholesales