2SJ649-AZ


2SJ649-AZ

Part Number2SJ649-AZ

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SJ649-AZ - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package25
ManufacturerRenesas Electronics America
Series-
PackagingBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs48mOhm @ 10A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Isolated Tab
Package / CaseTO-220-3 Isolated Tab

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2SJ649-AZ - Tags

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