2SJ649-AZ
2SJ649-AZ
Part Number 2SJ649-AZ
Description MOSFET P-CH 60V 20A TO-220
Package / Case TO-220-3 Isolated Tab
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab
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2SJ649-AZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2SJ649
Standard Package 25
Manufacturer Renesas Electronics America
Series -
Packaging Bulk
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Isolated Tab
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