Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

Part NumberSI2319CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 4.4A SOT-23

DatasheetSI2319CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2319CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319CDS-T1-GE3.
We are offering SI2319CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2319CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2319CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	77mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	595pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2319CDS-T1-GE3 - Related Products

	BSR92PH6327XTSA1	Infineon Technologies, P-Channel 250V 140mA (Ta) 500mW (Tc) Surface Mount PG-SC-59, SIPMOS®	View
	DMP1245UFCL-7	Diodes Incorporated, P-Channel 12V 6.6A (Ta) 613mW (Ta) Surface Mount X1-DFN1616-6 (Type E),	View
	PMZ320UPEYL	Nexperia USA Inc., P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006-3,	View
	SI2365EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View
	DMP2066LSN-7	Diodes Incorporated, P-Channel 20V 4.6A (Ta) 1.25W (Ta) Surface Mount SC-59-3,	View
	MCH6342-TL-W	ON Semiconductor, P-Channel 30V 4.5A (Ta) 1.5W (Ta) Surface Mount SC-88FL/MCPH6,	View
	FDMC6679AZ	ON Semiconductor, P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	AO3419	Alpha & Omega Semiconductor Inc., P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SISH617DN-T1-GE3	Vishay Siliconix, P-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	SI4421DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FDMA530PZ	ON Semiconductor, P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	STD46P4LLF6	STMicroelectronics, P-Channel 40V 46A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6	View

SI2319CDS-T1-GE3 - Tags

SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 PDF SI2319CDS-T1-GE3 datasheet SI2319CDS-T1-GE3 specification SI2319CDS-T1-GE3 image SI2319CDS-T1-GE3 India Renesas Electronics India SI2319CDS-T1-GE3 buy SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 price SI2319CDS-T1-GE3 distributor SI2319CDS-T1-GE3 supplier SI2319CDS-T1-GE3 wholesales