Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316DS-T1-E3

SI2316DS-T1-E3

SI2316DS-T1-E3

Part NumberSI2316DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 2.9A SOT23-3

DatasheetSI2316DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316DS-T1-E3.
We are offering SI2316DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316DS-T1-E3 - Related Products

	SI7686DP-T1-GE3	Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	MMBF170Q-7-F	Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	DMTH4008LFDFWQ-13	Diodes Incorporated, N-Channel 40V 11.6A (Ta) 990mW (Ta) Surface Mount U-DFN2020-6, Automotive, AEC-Q101	View
	SIRC18DP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	FDMC7678	ON Semiconductor, N-Channel 30V 17.5A (Ta), 19.5A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SI4386DY-T1-GE3	Vishay Siliconix, N-Channel 30V 11A (Ta) 1.47W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SISS26DN-T1-GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	BUK962R8-60E,118	Nexperia USA Inc., N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IXFA26N30X3	IXYS, N-Channel 300V 26A (Tc) 170W (Tc) Surface Mount TO-263AA, HiPerFET™	View
	APT60N60BCSG	Microsemi Corporation, N-Channel 600V 60A (Tc) 431W (Tc) Through Hole TO-247 [B],	View
	HUF76439S3ST	ON Semiconductor, N-Channel 60V 75A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™	View
	FDD850N10L	ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®	View

SI2316DS-T1-E3 - Tags

SI2316DS-T1-E3 SI2316DS-T1-E3 PDF SI2316DS-T1-E3 datasheet SI2316DS-T1-E3 specification SI2316DS-T1-E3 image SI2316DS-T1-E3 India Renesas Electronics India SI2316DS-T1-E3 buy SI2316DS-T1-E3 SI2316DS-T1-E3 price SI2316DS-T1-E3 distributor SI2316DS-T1-E3 supplier SI2316DS-T1-E3 wholesales